SML80J25 5/99 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v dss i d i dm v gs v gsm p d t j , t stg t l i ar e ar e as drain C source voltage continuous drain current pulsed drain current 1 gate C source voltage gate C source voltage transient total power dissipation @ t case = 25c derate linearly operating and storage junction temperature range lead temperature : 0.063 from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 2 nCchannel enhancement mode high voltage power mosfets 800 25 100 30 40 450 3.6 C55 to 150 300 25 50 2500 v a a v w w/c c a mj absolute maximum ratings (t case = 25c unless otherwise stated) 1) repetitive rating: pulse width limited by maximum junction temperature. 2) starting t j = 25c, l = 8.00mh, r g = 25 w , peak i l = 25a v dss 800v i d(cont) 25a r ds(on) 0.300 w w w w ? faster switching ? lower leakage ? 100% avalanche tested ? popular sotC227 package starmos is a new generation of high voltage nCchannel enhancement mode power mosfets. this new technology minimises the jfet effect, increases packing density and reduces the on-resistance. starmos also achieves faster switching speeds through optimised gate layout. d s g 1 3 4 2 r 38.0 (1.496) 38.2 (1.504) 30.1 (1.185) 30.3 (1.193) 14.9 (0.587) 15.1 (0.594) 3.3 (0.129) 3.6 (0.143) 7.8 (0.307) 8.2 (0.322) 31.5 (1.240) 31.7 (1.248) 4.0 (0.157) (2 places) r = 4.0 (0.157) 4.2 (0.165) ) ) 4.1 (0.161 4.3 (0.169 4.8 (0.187) 4.9 (0.193) (4 places) w = h = 8.9 (0.350) 9.6 (0.378) 11.8 (0.463) 12.2 (0.480) hex nut m 4 (4 places) 12.6 (0.496) 12.8 (0.504) 25.2 (0.992) 25.4 (1.000) 0.75 (0.030) 0.85 (0.033) 5.1 (0.201) 5.9 (0.232) 1.95 (0.077) 2.14 (0.084) sotC227 package outline. dimensions in mm (inches) source terminals are shorted internally. current handling capability is equal for either source terminal. * s g s d
SML80J25 5/99 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk characteristic test conditions min. typ. max. unit c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristic test conditions min. typ. max. unit 25 100 1.3 850 22 i s i sm v sd t rr q rr (body diode) (body diode) v gs = 0v , i s = C i d [cont.] i s = C i d [cont.] , dl s / dt = 100a/ m s i s = C i d [cont.] , dl s / dt = 100a/ m s continuous source current pulsed source current 1 diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c characteristic min. typ. max. unit 0.28 40 r q jc r q ja junction to case junction to ambient c/w source C drain diode ra tings and chara cteristics thermal chara cteristics 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% 3) see milCstdC750 method 3471 input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate C source charge gate C drain (miller) charge turnCon delay time rise time turn-off delay time fall time v gs = 0v v ds = 25v f = 1mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 w pf nc ns 6600 645 320 340 31 170 16 14 59 8 caution electrostatic sensitive devices. anti-static procedures must be followed. characteristic test conditions min. typ. max. unit bv dss i dss i gss v gs(th) i d(on) r ds(on) v gs = 0v , i d = 250 m a v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 2.5ma v ds > i d(on) x r ds(on) max v gs = 10v v gs = 10v , i d = 0.5 i d [cont.] drain C source breakdown voltage zero gate voltage drain current (v gs = 0v) gate C source leakage current gate threshold voltage on state drain current 2 drain C source on state resistance 2 800 25 250 100 2 4 25 0.300 v m a na v a w st a tic electrical ra tings (t case = 25c unless otherwise stated) d ynamic chara cteristics
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